Technical Parameters
Voltage
| Gate Bias Pressure |
■ Static and dynamic voltage-35V~ +35V, program control; ■ Switch frequency DC~500kHz(20K@50nF,500K@2nF); Frequency step 0.1 kHz, Accuracy 2%RD+0.2 kHz; Resolution 0.1 KHz; ■ Duty cycle 0%~10o%; Frequency step1%; Accuracy 1%RD0.2%:Resolution1%; ■ dV/dt21V/nS(C≤2nF); dV/dt>5OmV/nS(C≤50nF); Overshoot<5%; |
| Temperature Scope |
■ Room temperature ~175°CC Resolution:0.1°C; Accuracy: 2°C; Temperature uniformi-ty:≤3°C;Temperature stability:≤1°C ■ 176~225°C Resolution:0.1°C; Accuracy: 2°C; Temperature uniformi-ty: ≤5°C;Temperature stability:≤3°C. |
Measurements
| Leakage current |
■ 1nA~99.9nA, Accuracy1%RD土0.2nA, Resolution 0.1nA; ■ 100nA~999nA, 1%RD土2nA, Resolution 1nA; ■ 1uA~9.9uA, 1%RD土0.02uA, Resolution 0.01uA; ■ 10uA~99.9uA, 1%RD土0.2uA, Resolution 0.1uA. |
| VGSTH |
■ Voltage range 0~10V, Resolution 10mV, Accuracy 1%RD士20mV. ■ IGE output 0~1A,0-100mA; Resolution 0.05mA; Accuracy 1%SET+0.1mA;100mA~1A; Resolution 0.5mA:Accuracy1%SET 1mA. ■ Bias voltage:-35V~+35V. ■ After the bias voltage is applied, the test is completed in 10 milliseconds |
